磁过滤阴极真空弧法制备类金刚石膜的场致发射特性研究

Field emission characteristics of diamond-like carbon films prepared by magnetic filter cathode vacuum arc deposition

采用磁过滤阴极真空弧沉积法,在Cu基底表面上制备了以钛(Ti)和碳化碳(TiC)作为过滤层的类金刚石膜层。利用自制的场致发射特性测试设备,研究了类金刚石膜层的场致发射特性。利用拉曼光谱仪(Raman)和扫描电子显微镜(SEM)等分析方法对类金刚石膜的键合结构和微观形貌进行了表征。研究发现,利用磁过滤阴极真空弧沉积法可以在沉积温度100℃下制备膜基结合力较好的类金刚石膜。沉积速率为15 nm/min。类金刚石膜具有较好的场致发射特性,开启电压约为40 V/μm。Raman分析得到不同基底偏压下的类金刚石膜的ID/IG为1.19~1.57;SEM分析显示薄膜的微观结构上具有微米级突起结构。实验表明,应用磁过滤阴极真空弧方法可以制备出高sp3含量、表面具有微米级突起的类金刚石膜,这种类金刚石膜具有有利于场致发射的特性。

Diamond like carbon(DLC)films with Ti and TiCtransition layer were prepared on the surface of Cu substrate by filter cathode vacuum arc deposition method.The field emission characteristics of diamond-like carbon(DLC)films were studied by using a self-made field emission device.The bond structure and morphology of DLC films were characterized by Raman spectroscopy(Raman)and scanning electron microscopy(SEM).It is found that diamond-like carbon films with good adhesion could be prepared by magnetic filter cathode vacuum arc deposition method at 100℃.The deposition rate was 15 nm/min.The DLC films had good field emission characteristics and the opening voltage was about 40 V/μm.Raman analysis showed that the ID/IG of DLC films with different substrate bias voltage was 1.19-1.57.SEM analysis showed that the microstructure of DLC films had a micron scale protrusion structure.The results show that the diamond-like carbon films with high sp3content and micro protrusion on the surface could be prepared by the magnetic filter cathode vacuum arc deposition method.This kind of DLC film had the characteristics of field emission.