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Progress on 2D topological insulators and potential applications in electronic devices

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摘要 Two-dimensional topological insulators(2DTIs)have attracted increasing attention during the past few years.New 2DTIs with increasing larger spin-orbit coupling(SOC)gaps have been predicted by theoretical calculations and some of them have been synthesized experimentally.In this review,the 2DTIs,ranging from single element graphene-like materials to bi-elemental transition metal chalcogenides(TMDs)and to multi-elemental materials,with different thicknesses,structures,and phases,have been summarized and discussed.The topological properties(especially the quantum spin Hall effect and Dirac fermion feature)and potential applications have been summarized.This review also points out the challenge and opportunities for future 2DTI study,especially on the device applications based on the topological properties.
作者 侯延辉 张腾 孙家涛 刘立巍 姚裕贵 王业亮 Yanhui Hou;Teng Zhang;Jiatao Sun;Liwei Liu;Yugui Yao;Yeliang Wang(MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices,Beijing Institute of Technology,Beijing 100081,China)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第9期36-44,共9页 中国物理B(英文版)
基金 Project supported by the Beijing Natural Science Foundation,China(Grant Nos.Z190006 and 4192054) the National Natural Science Foundation of China(Grant Nos.61971035,61901038,and 61725107) Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB30000000) Beijing Institute of Technology Research Fund Program for Young Scholars(Grant No.3050011181814).
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