摘要
Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated.The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude,specifically,from 3×1012 cm-2·eV-1 to 4×1011 cm-2·eV-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field.Particularly,the results of x-ray photoelectron spectroscopy measurement show that the C-N bonds are generated near the interface after electron irradiation,indicating that the carbon-related defects are further reduced.
作者
郝继龙
白云
刘新宇
李诚瞻
汤益丹
陈宏
田晓丽
陆江
王盛凯
Ji-Long Hao;Yun Bai;Xin-Yu Liu;Cheng-Zhan Li;Yi-Dan Tang;Hong Chen;Xiao-Li Tian;Jiang Lu;Sheng-Kai Wang(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;Zhuzhou CRRC Times Electric Co.,Ltd.,Zhuzhou 412000,China)
基金
Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0100601)
the National Natural Science Foundation of China(Grant Nos.61674169 and 61974159).
