摘要
A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR). With the shunting effect of the surface gated diode path, the proposed EGDTSCR, with a width of 50 μm, exhibits a higher failure current (i.e., 3.82 A) as well as a higher holding voltage (i.e., 10.21 V) than the MLSCR.
作者
宋文强
侯飞
杜飞波
刘志伟
刘俊杰
Wenqiang Song;Fei Hou;Feibo Du;Zhiwei Liu;Juin JLiou(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;The College of Electronics and Information Engineering,Shenzhen University,Shenzhen 518060,China)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.61874098 and 61974017)
the Fundamental Research Project for Central Universities,China(Grant No.ZYGX2018J025).
