摘要
二维材料因其独特的物理结构和优异的光电特性,吸引了众多学者的研究兴趣,并在新型光电探测领域显示出了巨大的应用前景.目前研究的二维材料光电探测器多为光子型光电探测器,其光电探测过程涉及光到电的直接转换.如何充分利用光电转换机理,在器件性能和功能方面发挥二维材料的优势,是其在光电探测领域走向实际应用的关键.结合本课题组近年来的研究工作,以光子型光电探测器的基本光电转换机理为主线,将近年来二维材料光子型光电探测器在参数性能的提升、光电转换机理的拓展和器件功能的设计等方面进行了总结,并最后对二维材料光电探测器面临的挑战和可能的发展方向进行了展望.
Owing to the unique physical structure and excellent photoelectronic properties,two-dimensional(2D)materials have attracted more and more interest from researchers,which shows a huge potential for the applications of photodetection area.The 2D material-based photodetectors currently studied mainly belong to photon detectors.Their photodetecting porcess involves the directly photoelectronic conversion.The key point to the accomplishment of the 2D material photodetectors of high performance is to fully utilize photo-to-electric conversion mechanisms and take their advantages in the aspects of device performances and functions.By tracking previous works of the authors'research,the directly photoelectronic conversion mechanisms of photodetectors was investigated and the recent progress of 2D material-based photodetectors in terms of their performance enhancement,development of photoelectronic conversion mechanisms and structure design of devices was summarized.Finally,an outlook on the challenges and opportunities for 2D material photodetectors was presented.
作者
张永哲
李松宇
陈小青
ZHANG Yongzhe;LI Songyu;CHEN Xiaoqing(College of Materials Science and Engineering,Beijing University of Technology,Beijing 100124,China;Key Laboratory of Advanced Functional Materials,Ministry of Education,Beijing 100124,China;School of Physics,Beihang University,Beijing 100191,China)
出处
《北京工业大学学报》
CAS
CSCD
北大核心
2020年第10期1149-1166,共18页
Journal of Beijing University of Technology
基金
国家自然科学基金优秀青年项目(61922005)
国家自然科学基金NSAF联合基金资助项目(U1930105)
北京市优秀人才青年拔尖个人项目
装备预研中国电科联合基金资助项目(6141B08110104)
北京市教育委员会科技计划一般项目(KM202010005005)。
关键词
二维材料
光电探测器
光电转换机理
光导效应
光栅压效应
光伏效应
two-dimensional materials
photodetectors
photoelectronic conversion mechanism
photoconductive effect
photogating effect
photovoltaic effect