摘要
文中利用Mg掺杂ZnO压电膜制备了薄膜体声波谐振器,在较低浓度Mg掺杂时,器件机电耦合系数有微弱增大;当掺杂浓度过高时,机电耦合系数呈下降趋势。当掺杂Mg元素质量分数为2.23%时,器件在20~100℃内的温度频率系数为-26.0 ppm/℃,比之前纯ZnO基薄膜体声波谐振器的温度频率系数值-69.5 ppm/℃下降了很多。
Mg doped ZnO piezoelectric film was used to prepare thin film bulk acoustic resonator.When the doping concen-tration is quite lower,the electromechanical coupling factor is weak increase.When the doping concentration is too high,the electro mechanical drops.When the mass fraction of Mg is 2.23%,the temperature coefficient of frequency(TCF)of the device is-26.0 ppm/℃in the ranging of 20~100℃,which is greatly lower than the value-69.5 ppm/℃of the pure ZnO based FBAR.
作者
桂丹
郑丹
何琼
GUI Dan;ZHENG Dan;HE Qiong(Faculty of Electronic and Engineering,Wuhan Vocational College of Software Engineering,Wuhan 430205,China;Electronic Science and Technology,Huazhong University of Science and Technology,Wuhan 430074,China;Faculty of Physics&Electronic Technology,Hubei University,Wuhan 430062,China)
出处
《仪表技术与传感器》
CSCD
北大核心
2020年第9期23-26,共4页
Instrument Technique and Sensor
关键词
薄膜体声波谐振器
温度频率系数
传感器
机电耦合系数
thin film bulk acoustic resonator
temperature coefficient of frequency
sensor
electromechanical coupling factor
