摘要
Au80Sn20 alloy is a widely used solder for laser diode packaging.In this paper,the thermal resistance of Ga N-based blue laser diodes packaged in TO56 cans were measured by the forward voltage method.The microstructures of Au80Sn20 solder were then investigated to understand the reason for the difference in thermal resistance.It was found that the microstructure with a higher content of Au-rich phase in the center of the solder and a lower content of(Au,Ni)Sn phase at the interface of the solder/heat sink resulted in lower thermal resistance.This is attributed to the lower thermal resistance of Au-rich phase and higher thermal resistance of(Au,Ni)Sn phase.
基金
supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0401803,2017YFE0131500,2017YFB0405000)
National Natural Science Foundation of China(Grant Nos.61834008,61574160,61804164,and 61704184)
Natural Science Foundation of Jiangsu province(BK20180254)
China Postdoctoral Science Foundation(2018M630619)。
