横向超结器件耐压与比导的优值仿真与实验验证

Simulation and Experimental Verification of the Optimal Values of Voltage and Specific Conductance of Lateral Super Junction Devices

从超结电荷场对电势场的调制机理出发,以等效衬底模型(ES模型)和理想衬底条件为指导,在横向SOI超结器件中利用电荷补偿的思想得到理想衬底。对于已拥有理想衬底的横向超结器件固定其条宽W,长度LSJ,不断增加超结浓度NSJ,并观察得到的仿真结果,通过计算FOM=VB2/Ron,sp的值发现优质在6×10^16cm^-3掺杂浓度下所对应的击穿电压VB(Voltage-Breakdown)和比导通导通电阻(specific on-resistance Ron,sp)最佳折中关系。利用此思想在0.5μm工艺平台上通过对不同的超结注入剂量的实验,实现了0.8μm超结条宽下横向超结器件的最高优值。

Based on the modulation mechanism of the superjunction charge field to the potential field and guided by the equivalent substrate model(ES model)and the ideal substrate conditions.The ideal substrate is obtained by the charge compensation method in the lateral SOI superjunction device.For the lateral superjunction device with the ideal substrate,the width W and length LSJare fixed,and the concentration of the superjunction NSJis continuously increased,and the simulation results are observed.It is found that the best compromise between voltage breakdown VB and specific on-resistance Ron,spis obtained at a certain doping concentration by calculating the value of FOM=VB2/Ron,sp.By using this idea,the different injection doses of superjunction are experimented on a 0.5μm process platform,and the possible optimal injection dose is covered.The lowest specific on resistance of the lateral super junction device under the width of 0.8μm superjunction piller is achieved experimentally.