摘要
本文通过在钼层界面修饰一层超薄SiO2层,其在钼层上呈现岛状聚集。一方面岛状SiO2间隙位置,硒化钼依旧作为金属钼层与铜铟镓硒层间的晶格匹配层。另一方面单个岛状SiO2周边硒化钼厚度降低,减少了硒化钼对器件串联电阻的影响,提高了电池的转化效率。
In this paper,an ultra-thin SiO2 layer was Modified at the interface of the Mo layer,which showed islandlike aggregation on the Mo layer without continuous film formation.On the one hand,in the middle of the two island-shaped SiO2,Molybdenum selenide still serves as the lattice matching layer between the metal Mo layer and the CIGS layer.On the other hand,the thickness of Mo lybdenumselenide around a single island-shaped SiO2 is reduced,reducing the effect of Mo lybdenumselenide on the series resistance of the device,and improves the Effof the cells.
作者
郭永刚
徐会杰
侯丽新
王亚丽
Guo Yonggang;Xu Huijie;Hou Lixin;Wang Yali(China Lucky Group Corporation,Baoding,Hebei 071054,China)
出处
《信息记录材料》
2020年第9期1-3,共3页
Information Recording Materials