二氧化硅阶梯状薄膜热阻层微纳制备工艺研究

Study on Micro-nano Preparation Technology of SiO Stepped Thin Film Thermal Resistance Layer

在高温薄膜式热流传感器结构中,热阻层台阶的高度是影响热流传感器输出的重要因素。在热阻层的制备工艺中,需要精准控制台阶的高度和整体薄膜的厚度。目前常用的制备方法为溅射-湿法腐蚀和溅射-湿法腐蚀-溅射两种方法。选用电绝缘性高、硬度高、热导率低的SiO2作为热阻层材料,分析了限制热阻层台阶高度的因素,确定了高台阶的高度低于6μm,低台阶的高度高于500 nm。研究了两种热阻层台阶的制备方法的适用条件,分析了两种方法的优缺点,发现溅射-湿法腐蚀仅适用于基底粗糙度较低的薄膜,溅射-湿法腐蚀-溅射的方法不受粗糙度的限制,但需加宽掩膜板以防止侧蚀损坏薄膜。

In the structure of high temperature thin film heat flow sensor,the height of the thermal resistance layer step is an important factor affecting the output of the heat flow sensor.In the preparation process of the thermal resistance layer,the height of the step and the thickness of the overall film need to be accurately controlled.Currently,two preparation methods of sputtering-wet etching and sputtering-wet etching-sputtering are commonly used.SiO2 was selected as the material of the thermal resistance layer for its high electrical insulation,high hardness and low thermal conductivity.The factors limiting the step height of the thermal resistance layer were analyzed,and it was determined that the height of the high step should be lower than 6μm,and the height of the low step should be higher than 500 nm.The applicable conditions of the two methods of preparing the thermal resistance layer steps were studied,and the advantages and disadvantages of the two methods were analyzed.It was found that sputtering-wet etching method is only applicable to films with low substrate roughness,and sputtering-wet etching-sputtering method is not limited by the roughness,but the mask must be widened to prevent side etching.