Bi2Se3纳米片生长及晶体管制备

Growth of Bi2Se3 nanosplates and the transistors fabrication

通过化学气相沉积方法,在云母衬底上制备高质量的Bi2Se3纳米片.采用湿法转移技术,将纳米片转移到SiO2衬底上.用光刻技术制备基于单个Bi2Se3纳米片的晶体管,并施加底栅电压,对Bi2Se3纳米片晶体管进行有效调控.研究表明:当Bi2Se3纳米片与电极之间形成欧姆接触时,底栅的调控效果较好;而当Bi2Se3纳米片与电极之间形成肖特基接触时,底栅的调控效果较差.

High quality Bi2Se3 nanoplates were successfully prepared on mica substrates by chemical vapor deposition.The nanoplates were transferred to a SiO2 substrate by the wet transfer technique.A transistor based on a single Bi2Se3 nanoplate was prepared through photolithography,and the Bi2Se3 nanochip transistor was effectively tuned by applying a bottom gate voltage.It was shown that the bottom gate tunning effect is better when the Ohmic contact is formed between the Bi2Se3 nanoplate and the electrodes,while the bottom gate tunning effect is poor when a Schottky contact is formed.