期刊文献+

Stanene: A good platform for topological insulator and topological superconductor 被引量:3

原文传递
导出
摘要 Two dimenslonal(2D)topological insulators(TIs)and topological superonductors(TSC&)have been intensively studied for recent yars due to their great poterntial for dissipat iouless eloctron transporta-tion and fault-tolerant quantum computing,respectively.Here we focus on stanene,the tin analogue of grapbene,to give a brief review of their development a a candidate for both 2D TI and TSC.Stanene is proposed to bea TI with a large gap of 0.3 eW,and its topological properties are sensitive to various factors,e.g..the lattice constants,chemical functionalization and layer thickness,which offer various methods for phase tunning.Experimentally,the inverted gap and edge states are observed recently,which are strong evidences for TI.In addition,stanene is also predicted to be a time reversal invariant TSC by breaking inversion syumetry,supporting belical Majorana edge modes.The layer dependent superconduetivity of stanene is receatly confirmed by both transport and scauning tumeling microsoopy measurenents.This review givs a detailod introduction to stanene and its topological properties and some proepects are also discussed.
作者 Chen-Xiao Zhao Jin-Feng Ji 赵晨晓;贾金锋(Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education),School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China;Tsung-Dao Lee Institute,Shanghai Jiao Tong University,Shanghai 200240,China;CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China)
出处 《Frontiers of physics》 SCIE CSCD 2020年第5期85-99,共15页 物理学前沿(英文版)
基金 the National Natural Science Foundation of China(Grant Nos.11521404,11634009,11674222,11674226,11790313,11574202,11874256,U1632102,11861161003,and 11874258) the National Key Research and Development Program of China(Grant Nos.2016YFA0300403 and 2016YFA0301003) the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB08-2) the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB28000000).
  • 相关文献

参考文献1

二级参考文献23

  • 1Butler, S. Z.; Hollen, S. M.; Cao, L. Y.; Cui, Y.; Gupta, J. A.; Guti6rrez, H. R.; Heinz, T. F.; Hong, S. S.; Huang, J. X.;Ismach, A. F. et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 2013, 7, 2898-2926.
  • 2Fiori, G.; Bonaccorso, F; Iannaccone, G.; Palacios, T.; Neumaier, D.; Seabaugh, A.; Banerjee, S. K.; Colombo, L. Electronics based on two-dimensional materials. Nat. Nanotechnol. 2014, 9, 768 779.
  • 3Schwierz, F.; Pezoldt, J.; Granzner, R. Two-dimensional materials and their prospects in transistor electronics. Nanoscale 2015, 7, 8261-8283.
  • 4Lin, Y. M.; Dimitrakopoulos, C.; Jenkins, K. A.; Farmer, D. B.; Chiu, Y. H.; Grill, A.; Avouris, Ph. 100-GHz transistors from wafer-scale epitaxial graphene. Scienee 2010, 327, 662.
  • 5Kang, K.; Xie, S.; Huang, L. J.; Han, Y. M.; Huang, P. Y.; Mak, K. F.; Kim, C. J.; Muller, D.; Park, J. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 2015, 520, 656-660,.
  • 6Vogt, P.; De Padova, P.; Quaresima, C.; Avila, J.; Frantzeskakis, E.; Asensio, M. C.; Resta, A.; Ealet, B.; Le Lay, G. Silicene: Compelling experimental evidence for graphenelike two- dimensional silicon. Phys. Rev. Lett. 2012, 108, 155501.
  • 7Tao, L.; Cinquanta, E.; Chiappe, D.; Grazianetti, C.; Fanciulli, M.; Dubey, M.; Molle, A.; Akinwande, D. Silicene field-effect transistors operating at room temperature. Nat. Nanotechnol. 2015, 10, 227-231.
  • 8Houssa, M.; Dimoulas, A.; Molle, A. Silicene: A review of recent experimental and theoretical investigations. J. Phys.. Condens. Matter 2015, 27, 253002-253020.
  • 9Davila, M. E.; Xian, L.; Cahangirov, S.; Rubio, A.; Le Lay, G. Germanene: A novel two-dimensional germanium allotrope akin to graphene and silicene. NewJ. Phys. 2014, 16, 095002.
  • 10Xu, Y.; Yan, B. H.; Zhang, H. J.; Wang, J.; Xu, G.; Tang, P.; Duan, W.; Zhang, S. Z. Large-gap quantum spin hall insulators in tin films. Phys. Rev. Lett. 2013, 111, 136804.

共引文献1

同被引文献15

引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部