复合氮化铝压电薄膜研制及其应用

Preparation and Application of Composite AlN Piezoelectric Films

采用中频(MF,40 kHz)双S枪磁控反应溅射制备出了氮化铝(AlN)压电薄膜;采用直流磁控溅射法制作了Mo电极薄膜;采用脉冲DC磁控溅射Au、Cr、Al靶分别制作Au/Cr底电极薄膜及Al/Cr顶电极薄膜。通过对AlN压电薄膜、Mo及Au电极薄膜进行了X线衍射(XRD)分析,结果表明,复合AlN压电薄膜(002)面、Mo薄膜(110)面及Au薄膜(111)面择优取向优良,说明选用Al/Cr/AlN/Au/Cr/YAG复合结构压电薄膜能研制出Ku波段及K波段声体波微波延迟线(BAWDL),其Ku及K波段BAWDL器件插入损耗分别低至43.7 dB、54.6 dB。

The piezoelectric AlN thin films were prepared using middle frequency(MF,40 kHz)magnetron reactive sputtering process with dual s-gun structure.The electrode Mo thin films were made using DC magnetron sputtering process.The Au/Cr bottom electrode films and Al/Cr top electrode films were prepared by using pulse DC magnetron sputtering process to sputter gold(Au),chromium(Cr),aluminum(Al)targets.The AlN,Mo and Au thin films were analyzed by X-ray diffraction(XRD).The results show that the(002)crystal surface of the composite aluminum nitride AlN piezoelectric film,the(110)surface of Mo film and the(111)surface of Au film have excellent preferred orientations,indicating that the Al/Cr/AlN/Au/Cr/YAG composite piezoelectric film can be used to develop Ku-band and K-band bulk acoustic wave microwave delay lines(BAWDL),and the insertion losses are as low as 43.7 dB and 54.6 dB,respectively.