光电催化分解水Ⅲ-Ⅴ族半导体光电极薄膜保护策略

Thin Film Protection Strategy of Ⅲ-Ⅴ Semiconductor Photoelectrode for Water Splitting

Ⅲ-Ⅴ族半导体材料(如GaAs、InP、GaP等)具有抗辐射性能高、温度特性好、耐高温等特点。相比于其他材料构建的光电催化体系,由这类半导体构成的光电极具有更高的太阳能吸收效率和光电转换效率。然而,大多数Ⅲ-Ⅴ族半导体在水溶液电解质中的物理化学性质很不稳定,导致太阳能驱动分解水性能衰减较快。基于此,本文综述了薄膜保护层在改善Ⅲ-Ⅴ族半导体光电极电化学稳定性方面的主要成就和研究现状,分析总结了获得稳定高效的光电反应界面和分解水效率的策略,探讨了导致材料衰减的原因和相应改善措施,最后展望了薄膜保护策略的未来发展前景。

Due to high radiation resistance, good temperature characteristics and stability at high temperature, photoelectrodes integrated by Ⅲ-Ⅴ semiconductor materials, such as GaAs, GaP and InP, show higher solar absorption efficiency and photoelectric conversion efficiency compared with photoelectrodes constructed from other materials. However, the physical and chemical properties of most Ⅲ-Ⅴ semiconductors in aqueous electrolytes are very unstable, resulting in a rapid degradation of solar-driven water splitting performance. The recent progress of protective layer films research in improving the electrochemical stability of Ⅲ-Ⅴ semiconductor photoelectrodes are reviewed. In order to obtain a stable and efficient photoelectric reaction interface and the water splitting efficiency, the reasons of material attenuation and corresponding improvement methods have been highlighted. In addition, the future development of thin-layer protection strategies to obtain more efficient solar-driven water splitting devices based on Ⅲ-Ⅴ semiconductors have been prospected.