工业级纳米绒面多晶硅太阳电池的发射极扩散方阻调控其光电转换性能研究

Enhanced optoelectronic conversion performance of nano-textured multi-crystalline silicon solar cells through optimizing emitter sheet resistivity

本文制备了工业级纳米绒面多晶硅太阳电池,研究了发射极扩散方阻对其光电转换性能的影响。结果表明:提高发射极扩散方阻能够有效地提升电池的开路电压、短路电流,但填充因子相对降低。通过分析关键光电参数,其原因归结为:提高发射极扩散方阻有利于降低发射极及其表面载流子复合,但过高的发射极扩散方阻将导致发射极与金属栅线接触不良。采用优化的发射极扩散方阻,纳米绒面相对于微米绒面多晶硅太阳电池具有改善的光电转换性能,产线均值光电转换效率达到了19.20%。基于上述研究结果,讨论了进一步通过调控发射极扩散方阻来优化纳米绒面多晶硅太阳电池的方法。

Nano-textured multi-crystalline silicon(mc-Si) solar cells are successfully fabricated on an industrial scale and the effect of emitter sheet resistivity on photoelectric conversion is explored.The experimental results show enhanced short-circuit current and open-circuit voltage with increasing emitter sheet resistivity for the nano-textured mc-Si solar cell.It may be attributed to reduced recombination of charge carriers in the nano-emitter.However,the fill factor is reduced with increasing emitter sheet resistivity due to deteriorating contact between the metal grid and the nano-emitter.The nano-textured mc-Si solar cells with optimizing emitter sheet resistivity exhibit an enhanced optoelectronic conversion in comparison to micro-textured mc-Si solar cells,and high power conversion efficiency of up to 19.20%.Based on the results,we discussed how to further improve the photoelectric conversion performance of the nano-textured mc-Si solar cell through increasing emitter sheet resistivity.