铜氧化物纳米阵列转化膜阳极氧化法制备及比电容特性

Anodization Preparation of Copper Oxide Array Conversion Films and Evaluation of Their Specific Capacitance Properties

阳极氧化法可以直接在铜集流体表面生成铜氧化物转化膜以提高电极性能。采用恒电流阳极氧化一步法和两步法在高纯铜片上制备铜氧化物转化膜,对转化膜的形貌和物相进行表征和分析,并探索其比电容特性。结果表明:通过对电流密度、温度和添加剂的优化,采用一步法可以直接在高纯铜片表面获得CuO和Cu2O两相共存的纳米片阵列转化膜;阳极氧化两步法首先在高纯铜片获得氢氧化铜转化膜,然后通过煅烧处理得到铜氧化物纳米线阵列转化膜,组成主要为CuO,伴有少量的Cu2O。两种方法获得的铜氧化物转化膜电极的面积比电容在1m A/cm^2的电流密度下,分别能达到108 m F/cm^2和96 m F/cm^2。同时由于纳米线阵列转化膜具有较高的比表面积,是一种理想的基底材料,通过进一步的复合改性有望获得更佳的电化学性能。

The copper oxide conversion films were prepared by means of one-step and two-step of constant-current anodization method on high purity copper sheet. The morphologies and phases of the specimens were characterized and analyzed,and their specific capacitance properties were explored. Results showed that the anodizing parameters of one-step method,such as the current density,temperature and additives,were optimized to directly obtain the regular nano-sheet array conversion film on the surface of high-purity copper sheet,and the conversion film was comprised of CuO and Cu2O. However,for two-steps anodization,copper hydroxide conversion film was obtained firstly,then copper oxide nanowire array conversion film was obtained by calcining. The conversion film was comprised of CuO and a small amount of Cu2O. At the current density of 1 m A/cm^2,the specific capacitance of the copper oxide conversion film electrode obtained by the two methods reached 108 m F/cm^2 and 96 m F/cm^2,respectively. Meanwhile,the nanowire array conversion film was an ideal substrate material due to the high specific surface area,which was expected to obtain better electrochemical properties by further compound modification.