CVD单晶金刚石[NV]和[SiV]缺陷的抑制与消除

Suppression and elimination of[NV]and[SiV]defects in CVD single crystal diamond

反应气体中添加体积分数0.001%的N2,研究CVD金刚石PL(photoluminescence spectroscopy,PL)光谱发现,与N杂质相关的[NV]0与[NV]-和与Si杂质相关的[SiV]是金刚石中的主要杂质缺陷。经过高温高压(high temperature and high pressure,HPHT)处理后,[NV]0峰的强度被削弱,[NV]-峰的强度被增强,[SiV]峰的强度被显著增强,并新出现了[SiV]-宽峰。反应气体中N2体积分数降至0.0001%并添加0.5%的O2后,[NV]0与[NV]-峰消失,O2升高至1%后[SiV]峰强度出现了明显降低,继续升高O2含量,[SiV]峰强度下降趋势变缓,这些现象证明了添加少量O2有助于CVD金刚石中N和Si杂质缺陷的抑制与消除。

Investigating the photoluminescence spectroscopy(PL)of CVD diamond with 10 ppm N2 added in the reaction gas,it demonstrates that[NV]0 and[NV]-related to N impurity and[SiV]related to Si impurity are the main defects in diamond.After high temperature and high pressure(HPHT)treatment,the[NV]0 peak intensity was weakened,the[NV]-peak intensity was enhanced,the[SiV]peak intensity was significantly enhanced,and[SiV]-broad peak appears when the N2 content was decreased to 1 ppm and 0.5%O2 was added in the reaction gas,the[NV]0 and[NV]-peaks disappeared.When the O2 was increased to 1%,the[SiV]peak intensity significantly decreased.As the O2 content continued to increase,the decreasing of[SiV]peak intensity slowed down.These results demonstrated that a small amount of O2 addition was helpful to the inhibition and elimination of N and Si impurities in CVD diamond.