摘要
In this work,the two-dimensional MoS2 film was prepared by sulfuring the molybdenum atomic layer on SiO2/Si substrate.The reaction temperature,heating rate,holding time and carrier gas flow rate were inve stigated compre hensively.The quality of MoS2 film was characterized by optical microscopy,atomic fo rce microscopy,Raman and photoluminescence spectro scopy.The characte rization results showed that the optimum synthesis parameters were heating rate of 25℃/min,reaction temperature of 750℃,holding time of 30 min and carrier gas velocity of 100 sccm.The MoS2 gas sensor was fabricated and its gas sensing performance was tested.The test results indicated that the sensor had a good response to both reducing gas(NH3)and oxidizing gas(NO2)at room temperature.The sensitivity to 100 ppm of NO2 was 31.3%,and the response/recovery times were 4 s and 5 s,respectively.In addition,the limit of detection could be as low as 1 ppm.This work helps us to develop low power and integrable room temperature NO2 sensors.
基金
supports from the National Natural Science Foundation of China(Nos.51572173,51602197,51771121 and 51702212)
Shanghai Municipal Science and Technology Commission(Nos.19ZR1435200,18511110600 and 19JC1410402)
Innovation Program of Shanghai Municipal Education Commission(No.2019-01-07-00-07-E00015)
Shanghai Academic/Technology Research Leader Program(No.19XD1422900)。
