碳化硅MOSFET结电容模型

Junction Capacitance Model of SiC MOSFET

针对碳化硅(SiC)MOSFET结电容,提出了一种建模方法。该方法通过统筹考虑寄生电容的物理结构模型、数学模型以及电路仿真模型后优化生成。此处考虑结电容对SiC MOSFET动态特性的影响情况,进而对3种结电容(栅源极电容、栅漏极电容和漏源极电容)进行建模探究,得出适用于SiC MOSFET的非线性结电容模型。最终通过仿真及实验验证,表明该模型具有一定的准确性和合理性。

For the silicon carbide(SiC)MOSFET junction capacitance,a modeling method is proposed.This method is proposed by comprehensive considering three types of models.The physical structure model,the mathematical model,and the circuit simulation model of the parasitic capacitance,the effect of junction capacitance is considered on the dynamic characteristics of SiC MOSFET,then explores the three junction capacitances(gate-source capacitance,gatedrain capacitance,and drain-source capacitance)to derive the nonlinear junction capacitance model for SiC MOSFET.Finally,simulation results and experimental verification show that the model has a certain degree of accuracy and reasonableness.