基于SiC MOSFET的新型直线变压器驱动源设计

A Novel Design of Linear Transformer Driver Based on SiC MOSFET

采用新一代半导体开关器件碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET),通过新型平面式布局升压技术和优化同步触发电路,设计出一种可获得快上升沿、短脉冲的直线变压器驱动源(LTD)。该驱动源由8级LTD串联而成。此处在阐明LTD工作原理的基础上,详细分析LTD主电路参数的设计,以及8级串联结构的设计,并结合Pspice软件仿真与具体实验,充分验证了该驱动源设计的可行性。实验结果表明,该驱动源在200Ω负载上,可获得峰值电压约3.8 kV,上升沿约25 ns,下降沿约30 ns,整个脉冲宽度约100 ns输出,并实现在一定范围内输出脉宽可调。

A new generation of semiconductor switching device silicon carbide(SiC)metal oxide semiconductor field effect transistor(MOSFET)is used to design a novel linear transformer driver(LTD),which can generate fast rising edge and short pulse through a new plane layout of boost technology and optimized synchronous trigger circuit.The system is formed by connecting eight-stage of LTD.On the basis of clarifying the working principle of LTD,the design of LTD main circuit parameters and eight-stage series structure are analyzed in detail,then combines Pspice software simulation and specific experiments to fully verify the feasibility of the system design.The experimental results show that the LTD system can obtain a stable pulse output over a 200Ωresistive load,with a peak voltage of 3.8 kV,a rising edge of 25 ns,a falling edge of 30 ns,and a pulse width of 100 ns.And the output pulse width is adjustable within a certain range.