SiC光触发晶闸管的研制与特性分析

Development and Characteristic Analysis of SiC Light Triggered Thyristor

碳化硅(SiC)光触发晶闸管(LTT)在工业和国防领域均具有重要的应用价值。在此通过理论设计与实验研究相结合的方法,对4H-SiC LTT进行了研制。所研制SiC LTT为p型长基区结构,长基区厚度为80μm,杂质浓度为2×10^(14)cm^(-3)。为改善阳极发射结空穴注入效率低的问题,短基区设计为双层结构,其中上层轻掺杂层厚度为0.3μm、下层厚度为1.7μm。测试结果显示,所研制SiC LTT正向开启电压为3.1 V,通态压降为4.39 V,比导通电阻约为87.8 mΩ·cm^2;在100 mW/cm^2,365 nm紫外(UV)光触发下,开通延迟时间约为14.9μs,阳极电压下降时间为100 ns,阳极电流上升时间约为11.5μs。

Silicon carbide(SiC)light triggered thyristor(LTT)has important value in industry and national defense application.The 4 H-SiC LTT is developed through theoretical design and experimental study method.The SiC LTT used p-type blocking base structure.The thickness and doping concentration of the p-blocking base are 80μm and 2 x1014 cm-3,respectively.In order to improve the low hole-injection efficiency of anode emitter junction,thin n-base in the SiC LTT is designed double-layer.The thickness of upper and bottom layer are 0.3μm and 1.7μm,respectively.Test results showed that turn-on voltage of the SiC LTT is 3.1 V.The on-state voltage drop and specific on-resistance are 4.39 V and 87.8 mΩ·cm2,respectively.When triggered by 365 nm UV light with 100 mW/cm2 intensity,the turnon delay time,anode voltage dropping time and anode current rising time of the 4 H-SiC LTT are 14.9μs,100 ns and11.5μs,respectively.