10μm小间距红外探测器的铟柱生长研究

Indium bump evaporation research on IR detector of 10μm pixel distance

在10μm小间距的条件下进行红外探测器的铟柱生长工艺,会得到铟柱高度不足的结果;本文针对这种情况,开展了小间距的铟柱生长研究,比较了在不同基片温度和蒸发速率条件下的铟柱高度,并分析了试验结果,得到了最优的生长工艺条件。

The growth process of indium column in infrared detector with small spacing of 10um will result in the indium column with insufficient height.In view of this situation,the indium column with small spacing was studied in this paper,and the indium column height under different substrate temperature and evaporation rate was compared,and the test results were analyzed to obtain the optimal growth process conditions.