第三代半导体材料氮化镓(GaN)研究进展

The Research Progress of The Third Generation Semiconductor Materials GaN

第三代半导体材料氮化镓(GaN)因其禁带宽度大、电子漂移饱和速度高、击穿电压高、介电常数小、导电性能好等优点,在微电子和光电子领域有着广泛的应用前景而成为半导体材料研究的热点。本文详细阐述了第三代半导体材料氮化镓(GaN)的制备方法、研究现状及产业化进展,指出了需进一步努力的方向和解决的方案,并对其未来的发展趋势和应用前景提出了展望。

The third generation semiconductor material GaN have a wide applications in the field of microelectronics and optoelectronics,owing to their wide bandgap,saturated electron drift velocity,high breakdown voltage,high dielectric constant and small conductive performance.The paper introduces the performance and preparation methods of GaN semiconductor materials and their deficiencies and the way to solve,followed by discussed the development trend in the future.