镀铜银纳米线导电薄膜铜层蚀刻液研究

Study on copper etching solution for copper-plated silver nanowire conductive film

介绍了一种新型镀铜银纳米线导电薄膜制备技术:以磁控溅射法在涂布了OC(保护胶)的银纳米线(AgNWs)薄膜表面覆盖纳米铜层来替代银浆,再通过黄光制程中的蚀刻工艺将铜层进行图案化蚀刻。研究了蚀刻液中过硫酸钠和磷酸用量对铜层蚀刻效果的影响,得到较佳的铜蚀刻液为:磷酸117.7 g/L,过硫酸钠35.3 g/L。采用该蚀刻液能够将镀铜银纳米线薄膜上的Cu层完全蚀刻掉,并且不损坏OC层和AgNWs层,蚀刻时间易控,效果好。

A novel technology for preparing copper-plated silver nanowire conductive film was introduced.The film based on silver nanowires(AgNWs)film with an over-coating adhesive layer on its surface was covered with a magnetronsputtered nanoscale copper layer instead of silver paste,and then the copper layer was patterned and etched through a lithography process.The effects of the dosage of sodium persulfate and phosphoric acid on the removal of copper layer were studied.The copper etching solution was optimized as follows:phosphoric acid 117.7 g/L+sodium persulfate 35.3 g/L.The copper layer could be removed completely on the premise of undamaging the over-coating adhesive layer and the AgNWs layer by using the optimized etching solution.The etching time was easy to control and the removal effectiveness was good.