摘要
We fabricated Sb 2 Se 3 thin film solar cells using tris(8-hydroxy-quinolinato)aluminum(Alq 3)as an electron transport layer by vacuum thermal evaporation.Another small organic molecule of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine(NPB)was used as a hole transport layer.We took ITO/NPB/Sb 2 Se 3/Alq 3/Al as the device architecture.An open circuit voltage(V o c)of 0.37 V,a short circuit current density(J s c)of 21.2 mA/cm 2,and a power conversion efficiency(PCE)of 3.79%were obtained on an optimized device.A maximum external quantum efficiency of 73%was achieved at 600 nm.The J s c,V o c,and PCE were dramatically enhanced after introducing an electron transport layer of Alq 3.The results suggest that the interface state density at Sb 2 Se 3/Al interface is decreased by inserting an Alq 3 layer,and the charge recombination loss in the device is suppressed.This work provides a new electron transport material for Sb 2 Se 3 thin film solar cells.
作者
Wen-Jian Shi
Ze-Ming Kan
Chuan-Hui Cheng
Wen-Hui Li
Hang-Qi Song
Meng Li
Dong-Qi Yu
Xiu-Yun Du
Wei-Feng Liu
Sheng-Ye Jin
Shu-Lin Cong
师文建;阚泽明;程传辉;李文慧;宋航琪;李萌;于东麒;杜秀云;刘维峰;金盛烨;丛书林(School of Physics and Electronic Technology,Liaoning Normal University,Dalian 116029,China;School of Physics,Dalian University of Technology,Dalian 116024,China;Mechanical and Electrical Engineering College,Hainan University,Haikou 570228,China;State Key Laboratory of Molecular Reaction Dynamics,Dalian Institute of Chemical Physics,Chinese Academy of Sciences,Dalian 116023 China)
基金
Supported by the High Level Talents Project of Hainan Basic and Applied Research Program(Natural Science)(Grant No.2019RC118)
the Open Fund of the State Key Laboratory of Molecular Reaction Dynamics in DICP(Grant No.SKLMRD-K202005).
