摘要
本文利用电势依赖的原位二次谐波方法(SHG)研究Si(111)电极界面.研究发现Si(111)电极在不同方位角下,其不同的偏振组合的SHG强度曲线随外加电势的变化呈现直线型或抛物线型两种不同的线型.这种电势依赖的SHG响应曲线的差别可以用Si(111)电极的各向异性和各向同性对SHG信号的贡献来解释.Si(111)电极的各向异性和各向同性的贡献主要源于Si(111)电极掺杂浓度的增加.
Si(111)electrode has been widely used in electrochemical and photoelectrochemical studies.The potential dependent measurements of the second harmonic generation(SHG)were performed to study Si(111)electrode interface.At different azimuthal angles of the Si(111)and under different polarization combinations,the curve of the intensity of SHG with extern potential has a different form of line or parabola.Quantitative analysis showed that these differences in the potential-dependence can be explained by the isotropic and anisotropic contribution of the Si(111)electrode.The change in the isotropic and anisotropic contribution of the Si(111)electrode may be attributed to the increase in the doping concentration of Si(111)electrodes.
作者
刘彩合
白锐朋
白羽
郭源
张贞
Cai-he Liu;Rui-peng Bai;Yu Bai;Yuan Guo;Zhen Zhang(Beijing National Laboratory of Molecular Sciences,State Key Laboratory of Molecular Reaction Dynamics,CAS Research/Education Center for Excellence in Molecular Sciences,Institute of Chemistry,Chinese Academy of Sciences,Beijing 100190,China;University of the Chinese Academy of Sciences,Beijing 100049,China)
基金
supported by the National Natural Science Foundation of China(No.21673251,No.21773258,No.21873104,and No.91856121)
the Chinese Academy of Sciences(No.JKYYQ20180014)。
