摘要
二维层状MoS2薄膜具有超高的光响应度、高导电特性、良好的光学透明度以及优异的机械性能,是制造多功能和高性能光电探测器、传感器等最理想的半导体材料之一。在不同衬底上制备的MoS2薄膜性质有所差异,其构成的异质结性能也各具特色。首先,介绍了常用于制备层状MoS2薄膜的化学气相沉积(CVD)法和高温热分解法;然后,综述了在Si、塑料、GaN、GaAs、Si纳米线、蓝宝石、SiO2/Si和SiC等不同衬底上制备层状MoS2薄膜的方法,利用原子力显微镜、X射线衍射、拉曼光谱、X射线光电子能谱等测试方法对各衬底上制备的MoS2薄膜结构和性能进行了表征;同时讨论了相应的异质结器件的特性及应用,并对高质量MoS2薄膜在光电探测器、气体传感器、压电器件等光电子和纳电子器件中的应用进行了展望。
The two-dimensional layered MoS2 thin film is one of optimal semiconductor materials for fabricating multi-function and high-performance photodetectors and sensors due to its superior properties,such as ultra-high light response, high electrical conductivity, good optical transparency and outstanding mechanical properties. The properties of MoS2 thin films grown on different substrates are different, and the performances of the corresponding heterojunctions are also different. Firstly, the chemical vapor deposition(CVD) method and high temperature thermal decomposition method commonly used to prepare layered MoS2 thin films are introduced. Then,the methods of layered MoS2 thin films prepared on diffe-rent substrates such as Si, plastics, GaN, GaAs, Si nanowires, sapphire, SiO2/Si and SiC are reviewed. The structures and properties of MoS2 thin films prepared on different substrates were characterized by using atomic force microscopy, X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy. The characteristics and applications of the layered MoS2 heterojunction devices are discussed. The applications of high quality MoS2 thin films in optoelectronic and nano-electronic devices such as photodetectors, gas sensors and piezoelectric devices are prospected.
作者
陶化文
黄玲琴
朱靖
Tao Huawen;Huang Lingqin;Zhu Jing(College of Electrical Engineering and Automation,Jiangsu Normal University,Xuzhou 221000,China)
出处
《半导体技术》
CAS
北大核心
2020年第10期737-747,759,共12页
Semiconductor Technology
基金
国家自然科学基金资助项目(61604063,11547136)
江苏师范大学研究生科研创新计划项目(2020XKT078)。
关键词
二维层状MoS2
GAN
蓝宝石
SiC
化学气相沉积(CVD)法
高温热分解法
异质结
two-dimensional layered MoS2
GaN
sapphire
SiC
chemical vapor deposition(CVD)method
high temperature thermal decomposition method
heterojunction