In2O3纳米材料气敏传感器制备方法综述

Review on the Preparation Methods of In2O3 Nanomaterial Gas Sensors

氧化铟具有较宽的禁带宽度、较小的电阻率和较高的催化活性,是一种重要的n型半导体。氧化铟材料对氧化性气体和还原性气体都表现出良好的气敏性能,被广泛应用于半导体气体传感器。半导体气体传感器的性能,如灵敏度、选择性、稳定性、响应/恢复时间等,与气敏材料自身的理化性能、形貌、结构具有直接的关系。本文对近年来纳米结构的In2O3研究进展进行了综述,以In2O3纳米材料的制备方法以及所制备出的不同形貌结构进行分类介绍,对In2O3气敏传感器应用进行展望。

Indium oxide is an important N-type semiconductor with wide band gap,low resistivity and high catalytic activity.Indium oxide has good gas sensitivity to both oxidizing and reducing gases and is widely used in semiconductor gas sensors.The properties of semiconductor gas sensors,such as sensitivity,selectivity,stability,response/recovery time,etc.,are directly related to the physical and chemical properties,morphology and structure of gas-sensitive materials.In this paper,the research progress of In2O3 in nanostructures in recent years is reviewed.The preparation methods of In2O3 nanomaterials and the different morphologies prepared by In2O3 nanomaterials are classified and introduced,and the application of In2O3 gas sensor is prospected.