柔性无机铁电薄膜的制备及其应用

Fabrication and applications of flexible inorganic ferroelectric thin films

无机铁电薄膜材料有着优异的电、光特性,被广泛应用于介电、信息存储、压电、光电等领域.然而,基于单晶刚性基底和高温、含氧的合成环境的传统制备工艺,大大限制了其在柔性电子器件中的应用.实现无机铁电薄膜材料的柔性化可以将这些材料的性能优势进一步应用到可穿戴电子器件中,是下一代可穿戴电子器件领域的重要发展方向.本文综述了无机钙钛矿结构铁电薄膜的柔性化制备工艺,包括直接在柔性基底上生长和将铁电薄膜从刚性基底上剥离、转印到柔性基底两类.并介绍了柔性无机铁电薄膜的应用,对其研究现状及未来发展进行了总结与展望.

Inorganic ferroelectric films exhibit excellent electric and optic properties,which have been widely used in dielectrics,memory,piezoelectric,photoelectric devices,etc.However,conventional synthesis strategies based on rigid single-crystal substrates severely limit their applications in flexible electronics.Realization of flexible inorganic ferroelectric films can introduce the excellent properties of inorganic ferroelectric materials into flexible devices,which is the developing trend for the next generation of electronic devices.In this review,the strategies to fabricate flexible inorganic perovskite structures’ferroelectric films are summarized,including 1)direct growth on flexible substrates,2)transferring ferroelectric film from a rigid substrate to a flexible one.Subsequently,the applications of flexible inorganic ferroelectric films are briefly introduced.Finally,research status,prospects and future development trend of flexible inorganic ferroelectric films are discussed.