SiGe材料界面钝化研究新进展

Latest Research Progress of SiGe Material Interfacial Passivation

指出锗硅高迁移率材料与高k栅介质之间界面接触存在问题,并介绍了能够优化界面的方法,即钝化工艺。总结了目前针对锗硅材料的四种钝化工艺,即硫化处理、氮化处理、硅帽层和氧化处理。与其他三种钝化工艺相比,氧钝化工艺不仅可以得到最低的界面态密度,而且对载流子迁移率和器件驱动性能影响最小。详细介绍了三种氧钝化工艺,包括等离子体氧化、高压氧化和臭氧氧化。其中,高k介质淀积后的臭氧氧化方案不仅可以在低温条件下形成高质量的界面层,还具有原位性和各向同性等特性,符合7/5 nm工艺技术节点三维器件集成技术的要求。最后对钝化工艺的发展趋势进行了展望。

It is pointed out that there is the problem with the interface contact between the SiGe high mobility material and the high-kgate dielectric,and a method that can optimize the interface is introduced,i.e.the passivation process.The latest research progresses of the four passivation processes of the SiGe material are summarized,i.e.the sulfidation treatment,nitridation treatment,silicon cap layer and oxidation treatment.Compared with the other three passivation processes,the oxidation passivation process can obtain the lowest interface state density and has the minimal impact on the carrier mobility and device driving performance.Three kinds of oxygen passivation processes are introduced in detail,including the plasma oxidation,high-pressure oxidation and ozone oxidation.Among them,through the ozone oxidation scheme after the high-k dielectric deposition,a high-quality interface layer can be formed under low temperature,and the ozone oxidation scheme has in-situ and isotropic characteristics,which meets the requirements of the 7/5 nm process technology node three-dimensional device integration technology.Finally,the development trend of the passivation process is prospected.