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一种改进型基片集成波导-微带过渡器的仿真设计

Simulation Design of an Improved Integrated Waveguide Microstrip Transition Device
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摘要 在直接型基片集成波导-微带过渡器研究的基础上,将基片集成波导的两排通孔延伸至微带线部分,通过调节延伸出的通孔表面的覆铜宽度改变两种传输线间的阻抗匹配情况。为了验证设计思路的正确性,设计了12~20 GHz的基片集成波导-微带的过渡器。仿真结果显示:在12.4~20.5 GHz频带范围内各端口均回波损耗均小于-20 dB,实现了良好的匹配。 On the basis of the research of the direct substrate integrated waveguide microstrip transition device,two rows of throughholes of the substrate integrated waveguide are extended to the microstrip line,and the impedance matching between the two transmission lines is changed by adjusting the copper-clad width of the extended through-hole surface.In order to verify the correctness of the design idea,a 12~20 GHz substrate integrated waveguide microstrip transition device is designed.The simulation results show that the return loss of each port in the 12.4~20.5 GHz frequency band is less than–20 dB,which achieves a good matching.
作者 武欢欢 WU Huanhuan(Shaanxi Institute of Technology,Xi’an 710300,China)
出处 《电视技术》 2020年第7期60-61,共2页 Video Engineering
关键词 基片集成波导-微带过渡器 阻抗匹配 回波损耗 substrate integrated waveguide microstrip transistors impedance matching return loss
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