摘要
铜锌锡硫(CZTS)薄膜太阳能电池通常采用的缓冲层材料为有毒的半导体CdS,本文以禁带宽度可调且无环境污染的Zn(1-x)MgxO代替CdS。采用SCAPS-1D仿真软件,分析了Zn(1-x)MgxO/CZTS异质界面能带带阶、Zn1-xMgxO缓冲层材料载流子浓度和厚度对电池输出性能的影响。研究结果表明:当Zn(1-x)MgxO/CZTS异质界面导带带阶为0.1 eV、Zn(1-x)MgxO缓冲层材料载流子浓度为10^(18)cm^(-3)、厚度约50 nm时,能够获得最高效率的Zn(1-x)MgxO/CZTS薄膜太阳能电池。
Cu2ZnSnS4(CZTS)solar cells usually used toxic CdS as buffer material,the adjust-able band gap and environmentally friendly Zn1-xMgx O was used to instead of CdS in this paper.The characteristics of CZTS solar cells were simulated by using SCAPS-1 D simulation software,the effects of band offset at Zn1-xMgx O/CZTS heterointerface,carrier density and film thickness of Zn1-xMgx O buffer material on solar cell output performance were studied respectively.The results indi-cate that the highest efficiency of Zn1-xMgx O/CZTS thin film solar cell can be obtained when the con-duction band offset is 0.1 eV at Zn1-xMgx O/CZTS heterointerface,the doping concentration of Zn1-xMgx O buffer layer is 1018 cm-3 and the thickness is about 50 nm.
作者
包乌吉斯古楞
萨初荣贵
BAO Wujisiguleng;SA Churonggui(College of Mathematics and Physics,Inner Mongolia University for Nationalities,Tongliao,bmer Mongolia,028043,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2020年第5期337-342,共6页
Research & Progress of SSE
基金
国家自然科学基金资助项目(11547226)
内蒙古民族大学博士科研启动基金资助项目(BS484)。
