摘要
基于2μm GaAs HBT工艺,设计了一种工作于1.8~2.0 GHz的射频功率放大器。该功率放大器采用两级放大结构,功率级选用具有良好线性度和效率的J类功率放大器。输出匹配电路采用电容电感组成的两级网络来实现低Q值匹配,拓宽了宽带性能。在驱动级输入端偏置处添加模拟预失真,进一步改善了幅相特性。电源电压为3.3 V,偏置电压为3.4 V。采用ADS软件对该功率放大器进行仿真。结果表明,在1.8~2.0 GHz频率范围内,饱和功率为30.2 dBm,1 dB压缩点输出功率为29.5 dBm,小信号功率增益为32 dB,功率附加效率高于46%。
Based on a 2μm GaAs HBT process,a 1.8 GHz to 2.0 GHz RF power amplifier was designed.The power amplifier used two-stage amplification structure,and a class J power amplifier with good linearity and efficiency was selected for power stage.The output matching circuit utilized a low Q two-stage matching to broaden the broadband performance.The analog predistortion was added at the driver stage input bias,so the amplitude-phase characteristics were further improved.The power supply voltage was 3.3 V,and the bias voltage was 3.4 V.The ADS software was used to simulate the power amplifier.The results showed that the saturated output power was 30.2 dBm,the 1 dB compression point output power was 29.5 dBm,the small signal power gain was 32 dB,and the highest power added efficiency was more than 46%at 1.8~2.0 GHz frequency range.
作者
黄继伟
黄思巍
HUANG Jiwei;HUANG Siwei(Fujian Integrated Circuit Design Center,Fuzhou University,Fuzhou 350108,P.R.China)
出处
《微电子学》
CAS
北大核心
2020年第5期632-636,642,共6页
Microelectronics
基金
国家自然科学基金面上项目(61774035)。
