新型独立三栅FinFET单粒子瞬态效应TCAD分析

SET Sensitivity Analysis of Novel Tri-Independent-Gate FinFET by TCAD

针对独立三栅FinFET器件及其反相器的单粒子瞬态效应展开了深入研究。首先分析了N型独立三栅器件中最敏感区域的位置以及不同工作电压对器件敏感性的影响。然后,基于独立三栅器件独特的电流控制方式搭建五种不同工作模式的反相器单元,对重离子撞击NMOS下拉管最敏感区域的单粒子瞬态效应(SET)敏感性进行了比较。三维数值TCAD仿真结果表明,脉冲峰值电流与重离子在沟道中的路径体积成正比,且最敏感区域为漏与沟道之间的空间电荷区,工作电压会影响沟道势垒,从而影响器件的SET。另外,不同工作模式的反相器对改善抗辐照能力具有参考意义。

The effects of heavy ion hitting on tri-independent-gate(TIG)FinFET and inverters were investigated deeply.At first,the most sensitive area of N-type TIG FinFET and the influence of supply voltage on radiation sensitivity were discussed.Then,five kinds of inverters with different work modes were established based on the unique current control methods.The sensitivity of those inverters’single event transient was compared by ion striking on the most sensitive area of N-type pull down transistor.The results of 3 D numerical TCAD simulations showed that the peak drain currents under different angles were in directly proportional to the volume of ion path,and the space charge region between drain and channel was the most sensitive area.The supply voltage had an effect on single event transient through electric potential of channel region.In addition,inverters with different work modes were meaningful to improve the radiation hardness.