LDD注入工艺对40nm中压NMOS器件HCI-GIDL效应的优化

Optimization of 40nm MV NMOS Device with LDD Injection Process for HCI-GIDL Effects

基于40 nm CMOS工艺,研究了8 V MV NMOS器件的HCI-GIDL效应的优化。分析了增大LDD注入倾角、二次LDD注入由P注入变为As注入两种措施对电学特性的影响。测试结果表明,两种措施均对器件的衬底电流、关态泄漏电流产生较好效果。利用TCAD工具,模拟了LDD注入工艺的优化对掺杂形貌、电场分布和碰撞电离强度的影响。分析了HCI-GIDL效应得以优化的物理机制。

The balance optimization of HCI-GIDL effects of 8 V MV NMOS devices based on 40 nm CMOS technology were studied.The influence of increasing LDD injection tilt angle and changing the second-step LDD injection atom from P to As on the electrical characteristics of the device were analyzed.The test results showed that both measures had good effect on the substrate current and off-state leakage current.The effects of LDD injection process optimization on doping profile,electric field distribution and impact ionization intensity were simulated with TCAD tool.The physical mechanism of optimization of the HCI-GIDL effects were analyzed.