半导体电致变色材料上化学沉积WO3-ZnO膜性能分析

Characterization of WO-ZnO Thin Films Deposited via Chemical Route

采用化学沉积方法,并选择封端剂(十二烷基苯磺酸钠SDBS或偏苯三酸三辛酯TOTM)在半导体电致变色材料表面制备纳米WO3-ZnO膜,通过实验测试的方法分析其微观组织及电化学性能。研究结果表明:添加SDBS之后的试样是一种单一WO3-ZnO成分,生成了具有片状外形特征的WO3-ZnO膜,厚度接近10 nm,在相邻片间产生了明显的间隙,表面存在大量微裂纹,部分颗粒发生了团聚的情况。添加SDBS试样透射率达到82%。WO3-ZnO膜试样处于着色态状态下都形成了比蓝光区存在短波偏移情况的投射光谱,采用SDBS作为封端剂能够实现更佳变色的程度。以SDBS作封端剂可获得更高电流密度的WO3-ZnO膜,形成了包围面积更大的曲线。此时试样达到了12.8 s的着色响应时间,褪色为4.9 s。

The WO3-ZnO nanofilm was synthesized via chemical route on substrate of fluorine-doped tin oxide(FTO) glass.The influence of the end-blocking agents,including sodium dodecylbenzenesulfonate(SDBS) and trioctyl metabisulfate(TOTM),on the microstructures and electrochemical properties was investigated with X-ray diffraction,scanning electron microscopy and electrochemical workstation.The preliminary results show that the SDBS-addition outperformed the TOTM-addition,possibly because of the different nanostructures.For instance,in the colored state,the transmission spectra of the WO3-ZnO nanofilms,added with SDBS and TOTM and mainly comprising nanoflaks,showed a significant blue-shift and the SDBS-addition accounted for a better de-coloration.The transmittances of the SDBS-added and TOTM-added WO3-ZnO nanofilms were 82% and 75%,respectively.When it comes to CV and CA curves,the SDBS-addition brought about a higher current and enclosed a larger area,resulting in the colored(bleached) response-time of 12.8 s(4.9 s).