掩模版复印工艺图形畸变分析与改进

Analysis and Improvement of the Graphic Distortion in Mask Copying Process

批量化、低成本的掩模版复印工艺常被用于LED领域。在微米级图形的掩模版复印工艺中,受玻璃基板平面度的影响,光学衍射效应会导致图形发生畸变。为消弭复印工艺中的图形畸变,从光学衍射理论展开分析,提出通过调整光刻曝光剂量和光刻胶层厚度来提升掩模版复印工艺水平的方法。实验实现了4μm圆形图形掩模版的复印制作,结果表明该方法可以显著提升微米级图形的掩模版复印工艺水平,降低掩模版的制作成本。

Mask copying process is often used in the LED industry since it can be produced in large quantities with low cost.Influenced by the flatness of the glass substrate,the optical diffraction effect will cause the distortion of the micron-level graphics in the mask copying process.Aiming at eliminating the graphic distortion in the mask copying process,a method was proposed by adjusting the lithography process and resist thickness.The experiment realized the mask copying process for circular graph with the size of 4μm.The experimental result shows that this method can improve the process of mask copying for micron-level graphics and reduce the cost significantly.