摘要
采用磁控溅射技术在直径为5.8 mm的蓝宝石基底上制备厚度约为1μm的MgAlH储氢薄膜,溅射气氛为体积流量比3∶1的氩氢混合气,采用SEM和XRD技术对MgAlH薄膜的微观结构和成分进行表征。研究结果表明,相较于MgAl薄膜,制备的MgAlH薄膜表面比较粗糙,致密度较低。XRD分析结果表明,MgAlH薄膜中存在MgH2相。根据薄膜样品的XRD图谱,利用K值法计算得到MgAlH薄膜中MgH2的相对含量为质量分数30%。相较于MgAl薄膜,MgAlH薄膜的热导率未发生明显改变,但其光吸收率提高了18%左右。将MgAlH储氢薄膜装配成飞片靶,利用PDV系统对薄膜驱动飞片速度进行测试,结果表明,相较于纯MgAl薄膜,MgAlH储氢薄膜驱动飞片的速度提升了15%。
The MgAlH films with a thickness of 1μm were prepared by magnetron sputtering on sapphire substrates with a diameter of 5.8 mm.The gas media is the mixture of argon and hydrogen with a gas flow ratio of 3∶1.The microstructure and composition of MgAlH films were characterized by SEM and XRD,respectively.The results show that the surface of the MgAlH film is rougher and the density is lower compared with MgAl film.The relative content of MgH2 in the MgAlH film is calculated to be 30%using the K value method.The thermal conductivity of the MgAlH films is unchanged,however,the light absorption rate is increased by about 18%.The MgAlH films were assembled into a laser-driven flyer assembly,and the speed of the film-driven flyer was tested by PDV.The results reveal that the speed of MgAlH hydrogen storage films driven flyer can be increased by 15%compared with that of pure MgAl films.
作者
艾梦婷
王亮
唐舵
蒋洪川
孙宁恺
AI Mengting;WANG Liang;TANG Duo;JIANG Hongchuan;SUN Ningkai(Institute of Chemical Materials,China Academy of Engineering Physics,Mianyang 621000,Sichuan Province,China;State Key Laboratory of Electronic Thin Film and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610000,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2020年第11期62-66,共5页
Electronic Components And Materials
基金
国家自然科学基金(11902305)。
关键词
激光火工品
MgAlH储氢薄膜
磁控溅射技术
PDV测速
热导率
光吸收率
laser initiating explosive devices
MgAlH hydrogen storage film
magnetron sputtering technology
PDV speed measurement
thermal conductivity
light absorption rate