InGaAs 肖特基源漏MOSFET的多子带系综蒙特卡洛模拟

Multi-subband Ensemble Monte Carlo Simulation of InGaAs Schottky Barrier MOSFETs

采用基于有效质量近似的多子带、多能谷系综蒙特卡洛方法,考虑纳米尺度MOSFET沟道二维电子气中实际存在的多种散射机制,模拟InGaAs肖特基源漏MOSFET。结果显示,在稳态下,散射虽然改变了InGaAs肖特基源漏MOSFET沟道中沟道电势、电子浓度和速度的分布,但对InGaAs肖特基源漏MOSFET的输出特性和转移特性影响较小;而在施加阶跃漏端电压时,散射的存在增加了过冲电流的峰值和转换时间,降低了器件的截止频率。

With the help of a multi-subband,multi-valley ensemble Monte Carlo simulator,which takes into account of multiple scattering mechanisms present in nano-scale MOSFET channel’s two-dimensional electron gas,InGaAs Schottky barrier MOSFET is simulated.The results show that under steady state,although scattering alters its carrier density,velocity and electric potential distribution,Schottky barrier MOSFET’s output and transfer characteristic is merely impacted by scattering.When a step voltage is applied to the device’s drain contact,scattering increases the device’s peak over-shoot current and transition time.Besides,scattering also reduces the cut-off frequency,especially for short channel device.