DC磁控溅射沉积Fe_xN薄膜成分及生长机制

The Composition and Growth Mechanism of Iron Nitride Thin Films Deposited by DC Magnetron Sputtering

使用直流磁控溅射方法,Ar/N2作为放电气体,在玻璃衬底上沉积FexN薄膜.利用X射线光电子能谱(XPS)、掠入射小角X射线散射(GISAXS)、X射线衍射(XRD)、掠入射非对称X射线衍射(GIAXD)和原子力显微镜(AFM)研究薄膜的成分和生长机制.实验结果表明,在5%N2流量下获得FeN0.056单相化合物,薄膜中氮原子含量为14%,该值与α″-Fe16N2相中的氮原子的化学计量(11%)接近;GISAXS和AFM对薄膜表面分析表明,随溅射时间增加,薄膜变得愈加不光滑,用动力学标度的方法定量分析结果为:薄膜表面呈现自仿射性质,静态标度指数α≈0.65,生长指数β≈0.53±0.02,动力学标度指数z≈1.2,薄膜生长符合Kol-mogorov提出的能量波动概念的KPZ模型指数规律.

Iron nitride films were deposited on glass substrate by DC magnetron sputtering with mixed Ar/N2 as discharge (N2 fraction of 5%) and at different time (30 min, 20 min, 10 min and 5 min, respectively). The composition of the films was analyzed by means of Xray photoelectron spectroscopy experiment (XPS). The layer phases and the surface morphologies of the films were characterized with the aid of grazing incidence Xray scattering and Xray diffraction as well as atomic force microscopy. For the film grown at N2 fraction of 5%, the phase of FeN0056 appeared. The surface of the films showed the selfaffine character. The values of roughness exponent α≈065 and growth exponent β≈053 are in agreement with the improvised KPZ exponents based on Kolmogorovs energy cascade concept.