InSb红外探测器表面钝化工艺研究

Study on Surface Passivation Technology of InSb Infrared Detector

本文工作主要研究了InSb红外探测器表面钝化工艺问题,逐一探讨了射频功率、R(SiH4:N2O)配比、沉积温度、工作压强等工艺参数对InSb芯片表面钝化工艺的影响。将不同条件下获得的材料分别制成MIS结构和红外探测器并进行C-V和I-V测试,结果表明在射频功率为80 W、R配比为20:10、沉积温度为200℃、工作压强为10 Pa时,钝化后的试样C-V特性曲线良好,I-V特性曲线反向平缓,性能较好,满足探测器芯片研制的要求,进一步证实了该条件下的钝化效果较佳。

The work of this paper mainly studies the surface passivation process of InSb infrared detector,and discusses the effects of RF power,R(SiH4:N2O)ratio,deposition temperature and working pressure on the surface passivation process of InSb chip.The materials obtained under different conditions were respectively made into MIS structure and infrared detector and tested by C-V and I-V.The results showed that the RF power was 80W,the R ratio was 20:10,the deposition temperature was 200℃,and the working pressure was 10 Pa,the C-V characteristic curve of the passivated sample is good,the I-V characteristic curve is reversed,the performance is good,and meets the requirements of chip development,further it was confirmed that the passivation effect under this condition is better.