大功率IGBT模块结温提取研究

Study on Junction Temperature Extraction of High-power IGBT Module

为了提高大功率功率变换器的可靠性,需要对大功率绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)模块进行温度监测,到目前为止,对高压IGBT的研究较少。搭建了双脉冲实验平台,对4.5 kV、1.2 kA IGBT模块开关瞬态时的热敏感电参数进行了测量,并对每个参数是否适用于在线结温提取以及预期成本进行了讨论。结果表明,大多数参数除温度外还受负载电流和母线电压的影响,最合适的结温提取参数是准阈值电压和开通时集电极电流变化率,它们都可以通过IGBT的寄生电感来获取。

To improve the reliability of high-power power converters,the temperature monitoring of high-power insulated gate bipolar transistor(IGBT)module is required.Up to now,there have been few studies on high-voltage IGBTs in this field.In this paper,a double-pulse experimental platform was built to measure the thermal-sensitive electrical parameters of 4.5 kV,1.2 kA IGBT modules in the transient states of switching.In addition,the expected cost of each parameter and whether it was suitable for the online junction temperature extraction were discussed.Results show that most parameters were affected by temperature,as well as load current and bus voltage.The most suitable junction temperature extraction parameters were the quasi-threshold voltage and the current changing rate of collector during turn-on,which can be obtained by the parasitic inductance of IGBT.