基于MoS2/Graphene复合材料的摩擦纳米发电机

Triboelectric Nanogenerator Based on MoS2/Graphene Composite

制备了一种基于MoS2/Graphene复合纳米材料嵌入式电子接收层的摩擦纳米发电机(TENG),研究了不同电子接收层对TENG输出电压响应、频率响应及负载响应等参数的影响,并探讨了相关增强机制。在5 Hz的工作频率下,相比没有电子接收层的TENG,嵌入电子接收层的TENG的输出电压提升了3~8倍。在最佳外部负载阻抗的情况下,电子接收层为MoS2/Graphene的TENG(TENG-M/G)的最大输出功率是电子接收层为聚酰亚胺膜的TENG(TENG-PI)的23倍。通过分析转移电荷量的差异,探讨了不同电子接收层的TENG输出差异性的原因。为了进一步验证实验结果,制作了掺杂不同PI膜作栅绝缘层的金属-绝缘体-半导体(MIS)器件,通过分析其在1 kHz下的C-V特性曲线,探讨了造成TENG输出差异性的内部机制及MoS2/Graphene复合材料在TENG中的电荷捕获作用。

A triboelectric nanogenerator(TENG)based on MoS2/Graphene composite nanomaterial embedded in electron-receiving layer was prepared.The effects of different electron-receiving layers on the output voltage response,the frequency response and the load response of TENG were studied,and the related enhancement mechanism was also discussed.Under the working frequency of 5 Hz,the output voltage of TENG embedded in the electron-accepting layer is increased by 3 to 8 times,as compared with that of the TENG without the embedded electron-accepting layer.At the optimum external load impedance,the maximum output power of the TENG(TENG-M/G)with the electron-receiving layer of MoS2/Graphene is 23 times that of the TENG(TENG-PI)with the electron-receiving layer of polyimide film.By analyzing the total transfer quantity of electric charge,the causes of the difference in output among TENGs with different electron-accepting layers were discussed.In order to further prove the experimental results,metal-insulator-semiconductor(MIS)devices with different doped PI films as gate insulating layers were prepared.By analyzing its C-V characteristic curve at 1 kHz,the internal mechanism causing the difference of TENG output and the charge trapping effect of MoS2/Graphene composite in TENG were discussed.