一种GaAs基Si3N4薄膜斜坡电压测试方法及其应用

A Voltage-Ramp Test Method for GaAs-Based SiN Film and Its Application

为快速、准确地评估Si3N4薄膜的可靠性,参照联合电子设备工程委员会(JEDEC)的相关标准,采用斜坡电压法在5 V/s和0.5 V/s两种加压速率下对厚度为100 nm的GaAs基Si3N4薄膜进行测试,测试样品的总面积不小于20 cm2。结合斜坡电压法的测试结果,评估该Si3N4薄膜生产工艺的可靠性风险程度和Si3N4薄膜的耐压水平、缺陷密度和良率水平,并且为经时击穿(TDDB)线性电场模型预估Si3N4薄膜的寿命提供可靠数据。结果表明,当目标良率为99.99%时,5 V/s和0.5 V/s下Si3N4薄膜的耐压值分别为23 V和18 V;当目标良率为95%时,5 V/s和0.5 V/s下Si3N4薄膜的耐压值分别为87 V和82 V。另外,该Si3N4薄膜的非本征击穿比例为0.11%,该类型的击穿数据可用于评估生产工艺的可靠性风险程度。

In order to quickly and accurately evaluate the reliability of the Si3N4 film,the GaAs-based Si3N4 film with a thickness of 100 nm was tested by the voltage-ramp method at the ramp rate of 5 V/s and 0.5 V/s according to the relevant standards of the Joint Electron Device Engineering Council(JEDEC),and the total area of the test samples was at least 20 cm2.Combined with the test results of the voltage-ramp method,the reliability risk degree of the Si3N4 film production process,and the voltage withstand level,defects density and yield level of Si3N4 films were evaluated,which provided reliable data for the estimation of the Si3N4 film lifetime by the time dependent dielectric breakdown(TDDB)linear electric field model.The results show that when the target yield is 99.99%,the voltage withstand levels of the Si3N4 film are 23 V and 18 V at 5 V/s and 0.5 V/s,respectively;when the target yield is 95%,the voltage withstand levels of the Si3N4 film are 87 V and 82 V at 5 V/s and 0.5 V/s,respectively.In addition,the non-intrinsic breakdown ratio of the Si3N4 film is 0.11%,and the breakdown data of this type can be used to evaluate the reliability risk degree of the production process.