摘要
针对红外探测器制作特性的要求,改善制作材料的物理性能,为此研究了经硅掺杂的InAs/GaSb二类超晶格薄膜(由MOCVD生长)在12~300 K温度范围下的磁输运性质。用范德堡法进行电学测量,应用霍尔效应原理,计算各温度下样品的迁移率和载流子浓度。在低温下,观察到了薄膜的弱局域效应(weak localization, WL),且发现硅的掺杂使其有更好的WL稳定性。并用三维Kawabata模型来拟合弱局域效应,得到相位相干长度的值,解释了掺杂n型硅对于InAs/GaSb二类超晶格量子局域化的有利性,从而为红外探测器件的开发提供了有价值的参考。
Aiming at the characteristics of infrared detector fabrication and improving the physical properties of the materials,the magnetic transport properties of silicon-doped InAs/GaSb type II superlattice films(grown by MOCVD)at temperatures ranging from 12 K to 300 K was researched.The principle of the Hall effect was used to calculate the mobility and carrier concentration of the sample at various temperatures.Electrical measurements were performed using the Vanderberg method.At low temperatures,weak localization(WL)of the thin film is observed,and it is found that the doping of silicon gave it better WL stability.The three-dimensional Kawabata model is used to fit the weak local effects to obtain the value of phase coherence length.It explains the advantage of doped n-type silicon for the quantum localization of InAs/GaSb two types of superlattices,which provides a useful reference for the development of infrared detection devices.
作者
应志超
宋志勇
陈爱英
林铁
康世雄
YING Zhichao;SONG Zhiyong;CHEN Aiying;LIN Tie;KANG Shixiong(School of Materials Science and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Shanghai,200063,China)
出处
《光学仪器》
2020年第5期12-19,共8页
Optical Instruments
基金
国家自然科学基金(11204334,61475178)。
