ICP设备光刻胶灰化工艺中膜层残留的改善

Preventing method of film residue in PR ashing process based on ICP etcher

为改善TFT特性,采用感应耦合等离子体(ICP)设备进行4-Mask光刻胶(PR)灰化工艺,光刻胶剥离后源/漏数据线边缘、TFT沟道和其他像素区出现了线性的a-Si膜层残留。本文研究了光刻胶灰化工艺条件对a-Si膜层残留的影响,结果表明压力、偏压射频功率是产生膜层残留的主要因素,O2用量为次要因素。通过光刻胶灰化工艺优化得出了改善膜层残留的条件压力≥2.66 Pa,源极功率∶偏压功率≥3∶1,qv(SF6)∶qv(O2)≥1∶60,对感应耦合等离子体设备在光刻胶灰化工艺中的进一步应用具有非常重要的意义。

In order to improve the characteristics of TFT,4-mask PR ashing process was carried out by indu cti vely coupled plasma etcher.After PR strip,linear a-Si film residue appeared on the edge of source/drain data line,TFT channel and other pixel area.The effect of PR ashing conditions on a-Si film residue was studied.The results show that the pressure and Bias RF power are the main factors to produce the film residue,and the amount of O2 is the secondary factor.By adjusting the PR ashing recipe,the optimal condition for preventing film residue is obtained:Pressure≥2.66 Pa,Source power∶Bias power≥3∶1,qv(SF6)∶qv(O2)≥1∶60.The research of inductive coupling plasma etcher in PR ashing process has very important significance for the further application.