基材偏压对中频磁控溅射氮化铬薄膜微观结构和性能的影响

Effect of substrate bias voltage on microstructure and properties of chromium nitride film prepared by midfrequency magnetron sputtering

采用中频磁控溅射系统在手机不锈钢装饰件上沉积氮化铬薄膜,利用X射线衍射、扫描电镜、纳米压痕仪和球盘摩擦仪考察了基材偏压对薄膜微观结构、沉积速率、显微硬度和摩擦性能的影响。结果表明:氮化铬薄膜主要为面心立方晶相结构,存在(200)晶面择优取向;薄膜表面晶粒呈颗粒状且均匀致密地沉积在基材上,截面为柱状晶结构且柱状晶之间结合紧密;沉积速率随基材偏压的增大而增大;在基材偏压为−100 V时,薄膜显微硬度最高(为1207 HV),摩擦因数最小(为0.31)。

CrN thin films were deposited on decorative stainless steel parts of cellphones by mid-frequency magnetron sputtering.The effect of substrate bias voltage on microstructure,deposition rate,microhardness,and friction factor of the thin films were studied using X-ray diffractometer,scanning electron microscope,nanoindenter,and ball-on-disk tribometer.The results showed that the CrN thin films mainly exhibited face-centered cubic crystal phase structure with a preferential orientation of(200)crystal plane.The grains on the surfaces of the thin films were granular,and deposited uniformly and compactly on the substrate.The cross-sections of the thin films featured a tightly bonded columnar crystal structure.The deposition rate was increased with the increasing of substrate bias voltage.The thin films prepared at a substrate bias of−100 V had the highest hardness(1207 HV)and the lowest friction factor(0.31).