扩Ga基区高反压晶体三极管V—1特性分析

Voltage-current Characteristic Analysis of High-voltage-proof Transistor Based Ga-diffusion

从器件物理的角度,对杂质、掺杂方式不同,形成基区的高耐压晶体三极管I-V负阻效应随机性进行分析。结果认为,负阻摆幅的大小对小电流注入下放大性能的优劣产生直接影响,而对发射极-收集极间的真正击穿电压并无减小损失;进一步证明了在SiO_2/Si系统中,开管扩Ga形成的晶体管,具有耐压高、漏电流小的特点。

Negative resistance effect in voltage-current (Ⅰ—Ⅴ) characteristic of high-voltage-proof transistors which were doped by different dopants and different methods was analysed. It is demonstrated that amplified action at low current only affects negative resistance and the real breakdown voltage did not decrease. This transistors which are formed by open-tube Ga diffusion have characteristic of high-voltage-proof and low leakage current.