摘要
EuS is one of typical ferromagnetic semiconductor using as spin filter in spintronic devices,and the doped one could be a good spin injector.Herein,we fabricate a spin-functional tunnel junction by epitaxially growing the ferromagnetic EuS film on Nb-doped SrTiO3.The improvement of Curie temperature up to 35 K is associated with indirect exchange through additional charge carriers at the interface of EuS/Nb:STO junction.Its magnetic field controlled current-voltage curves indicate the large magnetoresistance(MR)effect in EuS barriers as a highly spin-polarized injector.The negative MR is up to 60%in 10-nm EuS/Nb:STO at 4 T and 30 K.The MR is enhanced with increasing thickness of EuS barrier.The large negative MR effect over a wide temperature range makes this junction into a potential candidate for spintronic devices.
作者
Jia Lu
Yu-Lin Gan
Yun-Lin Lei
Lei Yan
Hong Ding
芦佳;甘渝林;雷蕴麟;颜雷;丁洪(Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences(CAS),Beijing 100190,China;College of Physics and Materials Science,Tianjin Normal University,Tianjin 300387,China;Department of Physics,University of Chinese Academy of Sciences,Beijing 100049,China;CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100049,China)
基金
Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant Nos.XDB28000000 and XDB07000000)
the National Key Research and Development Program of China(Grant No.2016YFA0300600)
the Fund from the Beijing Municipal Science&Technology Commission(Grant No.Z191100007219012).
