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熔盐氮化法合成氮化锆粉体及其对硅粉氮化的影响

Synthesis of zirconium nitride powders via molten-salt nitridation and their effect on nitriding of silicon powder
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摘要 为寻求一种简单、安全、成本低、产率高的合成ZrN的方法,以ZrO 2和Mg粉为主要原料,在熔盐介质中氮化合成ZrN粉体。研究了熔盐介质(MgCl 2和MgCl 2-NaCl)、氮化温度(1000和1100℃)对产物物相和显微形貌的影响,并研究了合成的ZrN对硅粉氮化的影响。结果表明:熔盐介质MgCl 2与NaCl物质的量比为1∶2时,合成了纯相的ZrN;温度的升高有利于提高ZrN晶体的结晶度;与直接氮化硅粉相比,ZrN的添加可显著促进α-Si 3N 4晶须的生成。 In order to find a simple,safe,low-cost,and high-yield method for synthesizing ZrN powders,ZrN powders were synthesized in a molten-salt medium using ZrO2 and Mg powder as the main raw materials.The effects of the molten-salt medium(MgCl2 and MgCl 2-NaCl)and the nitriding temperature(1000 and 1100℃)on the phase composition and micromorphology of the product were investigated.The effect of the synthesized ZrN on the nitridation of silicon powder was studied.The results show that when the molar ratio of MgCl2 to NaCl is 1∶2,pure ZrN is formed;the increase of the temperature is beneficial to improving the crystallinity of ZrN crystals;compared with direct nitridation of silicon powder,the addition of ZrN can significantly promote the formation ofα-Si 3N 4 whiskers.
作者 王杏 陈洋 余超 丁军 邓承继 祝洪喜 Wang Xing;Chen Yang;Yu Chao;Ding Jun;Deng Chengji;Zhu Hongxi(The State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,Hubei,China)
出处 《耐火材料》 CAS 北大核心 2020年第6期484-487,497,共5页 Refractories
基金 国家自然科学基金项目(Nos.51574187,51502215,51602232) 湖北省自然科学基金创新群体项目(No.2018CFA022)联合资助
关键词 熔盐氮化法 ZRN Si 3N 4 物相组成 显微结构 molten-salt nitridation method zirconium nitride silicon nitride phase composition microstructure
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  • 1戚玉敏,崔春翔,申玉田,王如,刘双进,罗海峰.反应合成六钛酸钾晶须的研究[J].硅酸盐学报,2004,32(6):743-746. 被引量:19
  • 2魏明,王春波,乃学瑛,李中,李武.无机晶须研究进展Ⅰ:钛酸钾晶须的制备及应用[J].盐湖研究,2004,12(4):58-62. 被引量:22
  • 3陈金民,汪奇林,黄志良,许涛,高淑敏.烧结法制备四钛酸钾晶须的研究[J].武汉工程大学学报,2007,29(2):54-56. 被引量:8
  • 4WANG Y,ZHAO C H,CAO F,et al. Barrier capability of Zr-N films with different density and crystalline structure in Cu/Si contact systems[J] .Materials Letters,2008,62(21-22):3761-3763.
  • 5WANG Z L, LIU Z H, YANG Z P, et al. Characterization of sputtered tungsten nitride film and its application to Cu electroless plating [ J ]. Microelectronic Engineering, 2008, 85( 2 ) : 395 -400.
  • 6OU K L, CHIOU S Y, LIN M H, et al. Barrier capability of HfN films with various nitrogen concentrations against copper diffusion in CuHf-N/n ( + )-p junction diodes [ J ]. J Electrochem Soc, 2005,152(2) : G138-G143.
  • 7ZHANG L, GUO H W, ZHANG C, et al. Characterization of low-dielectric-constant SiCON films grown by PECVD under different RF power [ C ]//Proc of 9th Int Conf on Solid-State and Integrated-Circuit Technology. Beijing, China, 2008 : 788- 791.
  • 8MILOSEV I,STREHBLOW H H, NAVINSEK B. Comparison of TiN, ZrN and CrN hard nitride coatings: electrochemical and thermal oxidation[ J]. Thin Solid Films, 1997,303 (1-2) : 246- 254.
  • 9MATSUOKA M, ISOTANI S, SUCASAIRE W, et al. X-ray photoelectron spectroscopy analysis of zirconium nitride-like films prepared on Si (100) substrates by ion beam assisted deposition [ J ]. Surface & Coatings Technology, 2008, 202(13) :3129-3135.
  • 10XIA W, WANG Y M, HAGEN V, et al. The synthesis of Zr02/ Si02 nanocomposites by the two-step CVD of a volatile halogenfree Zr alkoxide in a fluidized-bed reactor[J]. Chemical Vapor Deposition, 2007,13 ( 1 ) : 37-41.

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